4timing.com, October 2002
STMicroelectronics light emitting
silicon is based on the implanting of ions of rare-earth metals such as erbium
or cerium, in a layer of silicon rich oxide (SRO), such as silicon dioxide
enriched with silicon nanocrystals of one or two nanometers diameter.
The company has patented a structure in which two circuits, built on the
same chip are electrically separated from each other by insulating silicon
dioxide, but communicate via optical signals using integrated silicon light
emitters and detectors.
Agere Systems Inc. said that it had
signed a multiyear deal with Huawei Technologies Co. Ltd., a leading Asian
manufacturer of optical transport equipment, to provide chips for use in SONET,
asynchronous transfer mode, and Gigabit Ethernet metropolitan equipment.
Based on this deal, Agere’s seven chip-level products, including
pointer-processors, framers, and transceivers, will be ordered in volumes
amounting to several million dollars. Most
of the Agere chips will be integrated directly into the line cards Huawei uses
in its networking equipment.
Sharp Corp. is starting volume production this month of system LCD products
that integrate logic into display panels at a facility in Tenri, Japan.
System LCDs have IC circuitry built into the display panel, and use a
continuous grain silicon (CGS) technology that was developed by Sharp in
collaboration with the Japanese Semiconductor Energy Laboratories.
CGS uses a thin layer of bonded silicon crystals on a glass substrate, and
will enable large displays to be made. The design allows processors and graphics chips to be built
directly on to the glass substrate together with the crystals, an integration
that's not possible with amorphous silicon.
In the Sharp substrate, there is
a steady transition between the individual polysilicon crystals. Electronics in
the CGS layer move around 600 times faster than in amorphous silicon crystals.
The technology will enable ultra thin mini displays to be built into chip
cards, Sharp said.
Corporation has announced moves to reinforce its ability to meet fast growing
demand in the Chinese semiconductor market that include taking full control of a
manufacturing joint venture and new manufacturing facilities.
The measures come into effect immediately and will allow them to speed-up
decision making and meet growing demand with increased production capacity.
The company will take full control of Wuxi Huazhi Semiconductor, by
purchasing the stake of its partner, Huajin Electronics Group, one of China's
leading semiconductor manufacturers. Toshiba
will increase the capitalization of the company to $15 million and transfer
operations to a newly developed industrial park at Wuxi, where a two-year,
5-billion yen investment program will raise capacity, currently 3 million units
a month, to 30 million units a month.
Semiconductor has introduced two new amplifier chips.
The LMH6628 voltage feedback amplifier is the lowest-noise, 300MHz, 550V/usec
slew rate, dual amplifier on the market, claimed by the company. Its 2nV/÷Hz input voltage noise density makes it well
suited for receiving small signals over long, twisted pair telephone lines such
as VDSL applications. The fast
settling time of 12ns to 0.1% and low THD of -65dBc make it a good fit for
10-bit data acquisition systems. The
ability to drive heavy capacitive loads also makes the LMH6628 suitable for
directly driving ADCs. This allows
the elimination of an additional buffer stage in the front end of many receiver
offers key video specifications with differential gain and phase (DG/DP) of only
0.02 % /0.02°. The device's large
signal, 3dB bandwidth of 170MHz at Av=+2 for a 4Vpp output and 0.1dB gain
flatness to 100MHz make it well suited for high-end video systems.
It is able to drive 8Vpp from a 10V supply.
The improved AC parameters make the LMH6715 a good fit for many high-end
consumer video applications such as video distribution systems, video cameras,
video cable driving, multimedia systems and HDTV.